The TC58NVG1S3HTA00 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes × 64 pages × 2048blocks. The device has two 2176-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 2176-byte increments. The Erase operation is implemented in a single block unit (128 Kbytes + 8 Kbytes: 2176 bytes × 64 pages). The TC58NVG1S3HTA00 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.(点击即可咨询芯片详细信息)
TC58NVG1S3HTA00 ’s Features:
1. Organization x8
-Memory cell array 2176 × 128K × 8
-Register 2176 × 8
-Page size 2176 bytes
-Block size (128K + 8K) bytes
2. Modes
-Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Cop
-Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
3. Mode control Serial input/output Command control
4. Number of valid blocks Min 2008 blocks Max 2048 blocks
5. Power supply VCC = 2.7V to 3.6V
6. Access time Cell array to register 25 μs max Serial Read Cycle 25 ns min (CL=50pF)
7. Program/Erase time Auto Page Program 300 μs/page typ. Auto Block Erase 3.5 ms/block typ.
8. Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 μA max
9. Package TSOP I 48-P-1220-0.50 (Weight: TBD g typ.)
10. 8 bit ECC for each 512Byte is required.
TC58NVG1S3HTA00 ’s Block Diagram
TC58NVG1S3HTA00 ’s Package
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